With the technical support from Professor Jiang Fengyi research group in Education Ministry Engineering Research Center for Luminescence Materials and Devices in Nanchang University, Lattice Power (Jiangxi) Corporation was co-funded in early 2006 by the leading GSR Ventures, Mayfield Fund (an international top-class Venture Capital) and AsiaVest, specializing in the research and production of silicon substrate GaN-based LED epitaxial materials and devices.
Professor Jiang Fengyi, President of the Company, who was graduated from Changchun Physics Institute of Chinese Academy of Sciences, is a prominent professional and technology expert in China as well as the team leader of the Company. The subject of Materials Physics and Chemistry led by Professor Jiang Fengyi has been a National Key Subject. The Education Ministry Engineering Research Center for Luminescent Materials and Devices and the National Semiconductor Lighting Industrialization Base were established in Nanchang.
The present GaN-based LEDs on the market are manufactured on sapphire or silicon carbide substrates, with the main patents controlled by companies in Japan and the United States respectively. It has been a dream of the industry that silicon, the first-generation semiconductor material, can be used as the substrates for the growth of GaN-based luminous materials.
Memorabilia of Company 
With the technical support from Professor Jiang Fengyi research group in Education Ministry Engineering Research Center for Luminescence Materials and Devices in Nanchang University, Lattice Power (Jiangxi) Corporation was co-funded in early 2006 by the leading GSR Ventures, Mayfield Fund (an international top-class Venture Capital) and AsiaVest, specializing in the research and production of silicon substrate GaN-based LED epitaxial materials and devices. 
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Professor Jiang Fengyi, President of the Company, who was graduated from Changchun Physics Institute of Chinese Academy of Sciences, is a prominent professional and technology expert in China as well as the team leader of the Company. The subject of Materials Physics and Chemistry led by Professor Jiang Fengyi has been a National Key Subject. The Education Ministry Engineering Research Center for Luminescent Materials and Devices and the National Semiconductor Lighting Industrialization Base were established in Nanchang.
The present GaN-based LEDs on the market are manufactured on sapphire or silicon carbide substrates, with the main patents controlled by companies in Japan and the United States respectively. It has been a dream of the industry that silicon, the first-generation semiconductor material, can be used as the substrates for the growth of GaN-based luminous materials.